描述
無描述配置
無配置OEM 代工型號說明
The Applied UVision® 4 wafer Inspection system was introduced in 2010, enabling customers to detect yield-limiting defects in the critical patterning layers of 32nm and below logic and memory devices using DUV laser-based imaging technology. The UVision 4 system’s extendable architecture of high-power polarized deep ultra-violet laser, optimized scattered light collection, and advanced noise reduction capabilities, addresses the inspection challenges of 32nm and below with optical inspection capabilities beyond the resolution limits of conventional brightfield (BF) inspection. Innovative algorithms enable simultaneous detection of systematic mask induced defects (i.e., "haze" defects) and random defects at production worthy throughput made possible by an enhanced image processor. Wide dynamic range detection schemes eliminate the multiple region-specific scans previously required, enabling regions of a chip with differing contrasts to be imaged with optimal sensitivity in a single pass without compromising throughput.文檔
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APPLIED MATERIALS (AMAT)
UVISION 4
已驗證
類別
Defect Inspection
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
98769
晶圓尺寸:
12"/300mm
年份:
未知
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Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
UVISION 4
已驗證
類別
Defect Inspection
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
98769
晶圓尺寸:
12"/300mm
年份:
未知
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
無配置OEM 代工型號說明
The Applied UVision® 4 wafer Inspection system was introduced in 2010, enabling customers to detect yield-limiting defects in the critical patterning layers of 32nm and below logic and memory devices using DUV laser-based imaging technology. The UVision 4 system’s extendable architecture of high-power polarized deep ultra-violet laser, optimized scattered light collection, and advanced noise reduction capabilities, addresses the inspection challenges of 32nm and below with optical inspection capabilities beyond the resolution limits of conventional brightfield (BF) inspection. Innovative algorithms enable simultaneous detection of systematic mask induced defects (i.e., "haze" defects) and random defects at production worthy throughput made possible by an enhanced image processor. Wide dynamic range detection schemes eliminate the multiple region-specific scans previously required, enabling regions of a chip with differing contrasts to be imaged with optimal sensitivity in a single pass without compromising throughput.文檔
無文檔