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Mirra Mesa Integrated Oxide/STI CMPOEM 代工型號說明
The Applied Mirra Mesa CMP system delivers industry-leading 200mm production CMP for 0.13-micron and below devices. Proven for oxide, shallow trench isolation (STI), polysilicon, tungsten and copper applications: the Applied Mirra Mesa system delivers both excellent process performance and the smallest footprint for the highest output per square foot. Its 3-platen, 4-head architecture coupled with in situ endpoint detection capability provides process flexibility and reliability. The system's integrated Mesa cleaner uses unique single-wafer megasonic cleaning technology and double-sided brush scrubbing to control corrosion and remove particles and slurry residue from both sides of the wafer (including very small recessed features and difficult bevel regions). Based on the Titan Head system (which has the largest production installed base in the industry), the new Titan Profiler polishing head allows advanced polishing profile control by precisely controlling polishing pressure independently in several zones across the wafer. Its ability to tune the film removal rate to match specific wafer characteristics with slurry chemistries provides superior control over dishing and erosion. This unique capability significantly increases precision in applications that may have variable incoming film thickness, such as polishing electroplated dual damascene copper layers. Superior process control is provided by the system's FullScan endpoint technology which enables users to scan the entire wafer to precisely control overpolishing, contributing to higher yields and excellent results on copper-based chips. This capability minimizes dishing and erosion of copper wiring structures, creating the flat surface topography needed to create multiple layers of interconnects. iScan process monitoring and control system is a real-time inline copper thickness monitor, which compensates for incoming profile and thickness non-uniformity and wafer-to-wafer removal rate variations, while maximizing tool throughput. The Applied Mirra Mesa system's copper process technology also has been integrated to work with Applied Endura Electra Cu Barrier/Seed and Applied Electra Cu ECP systems to provide a fully characterized, seamless process flow.文檔
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類別
CMP
上次驗證: 超過60天前
關鍵商品詳情
條件:
Refurbished
作業狀態:
未知
產品編號:
77926
晶圓尺寸:
8"/200mm
年份:
1999
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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APPLIED MATERIALS (AMAT)
MIRRA MESA
類別
CMP
上次驗證: 超過60天前
關鍵商品詳情
條件:
Refurbished
作業狀態:
未知
產品編號:
77926
晶圓尺寸:
8"/200mm
年份:
1999
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
Mirra Mesa Integrated Oxide/STI CMPOEM 代工型號說明
The Applied Mirra Mesa CMP system delivers industry-leading 200mm production CMP for 0.13-micron and below devices. Proven for oxide, shallow trench isolation (STI), polysilicon, tungsten and copper applications: the Applied Mirra Mesa system delivers both excellent process performance and the smallest footprint for the highest output per square foot. Its 3-platen, 4-head architecture coupled with in situ endpoint detection capability provides process flexibility and reliability. The system's integrated Mesa cleaner uses unique single-wafer megasonic cleaning technology and double-sided brush scrubbing to control corrosion and remove particles and slurry residue from both sides of the wafer (including very small recessed features and difficult bevel regions). Based on the Titan Head system (which has the largest production installed base in the industry), the new Titan Profiler polishing head allows advanced polishing profile control by precisely controlling polishing pressure independently in several zones across the wafer. Its ability to tune the film removal rate to match specific wafer characteristics with slurry chemistries provides superior control over dishing and erosion. This unique capability significantly increases precision in applications that may have variable incoming film thickness, such as polishing electroplated dual damascene copper layers. Superior process control is provided by the system's FullScan endpoint technology which enables users to scan the entire wafer to precisely control overpolishing, contributing to higher yields and excellent results on copper-based chips. This capability minimizes dishing and erosion of copper wiring structures, creating the flat surface topography needed to create multiple layers of interconnects. iScan process monitoring and control system is a real-time inline copper thickness monitor, which compensates for incoming profile and thickness non-uniformity and wafer-to-wafer removal rate variations, while maximizing tool throughput. The Applied Mirra Mesa system's copper process technology also has been integrated to work with Applied Endura Electra Cu Barrier/Seed and Applied Electra Cu ECP systems to provide a fully characterized, seamless process flow.文檔
無文檔