CANON acquired ANELVA and became CANON ANELVA Corporation which focuses on: Vacuum thin-film deposition and processing equipment, semiconductor device manufacturing equipment, storage device manufacturing equipment, equipment for electronic device manufacturing and for R&D, maintenance service, and vacuum components.


CANON / ANELVA

ILD 4100SR

ILD-4015

ILD 4100SDII

C 7100GT

I-4500

High power and dry!
Portable type with pump. For Clean environment.

M-222LD-D 

PDC-157F

PDC-157E

C-7500L

SPC-530H	

ILC 1080

COSMOS I-1201

L-430S-FHL

FC7100

SPL-500

COSMOS I-1281

C-7730FH

ILC-1012

ILC 1051

PDC-028

C-7960FL

ILC-1013

L-430S-FH

ASH-210

Anelva: ILD-4100 three-chamber cluster tool. Helicon wave source licensed from Plasma and Materials Technology (MORI source), can be configured with Helicon, RIE, and microwave downstream asher chambers, metal etch, poly etch processes.

ILD-4100

PRF-125c

SPF-313H

I-1060 SVII

L-332S-FH

SPF-312

IC7500

IC7400

MRAM volume manufacturing
System configuration: Cluster type
Substrate size: φ300mm

NC8000

Upgrade from HC7100 (PVD equipment for head) enabling mass-production of φ300 mm wafers based on experience with the φ300 mm wafer production line.

EC7800

COSMOS 300 I-1201

System configuration: Cluster type (up to three annealing chambers) C to C type
Substrate size: φ3", φ4", φ6"

EC7200

I-1230

C-7010C

ML3000

M-212LD

System configuration: Tray cluster PVD equipment
Substrate size: φ2" substrate to φ8" substrate

EC8100

The Anelva I-1060 SV is a sputtering system that can handle 8" wafers with a notch. It has a Chamber L1 with an Etch (TMP) structure, a 110 Holder Mg, and uses Ar gas. The power supply for this chamber is 60M + 400 KHz, 1kW (RF).

I-1060 SV

EC3000

Electronic component production
System configuration: Horizontal inline type
Substrate size: Effective deposition area 300mm×450mm
Cathode: 5"×16" cathode×3 (single side)

EL3200

EVC-1701

FC7102

System configuration: Cluster-type (EC7000 sputtering chamber ×1, EC7001 sputtering chamber ×2) Tray transport method
Substrate size: φ200mm maximum
Cathode: φ4" cathode ×3 (Option: φ12.5" cathode ×1, φ4" cathode ×4)
Operation method: Fully automated (pumping, transport, deposition)

EC7001

System configuration: Cluster type
Substrate size: φ300mm

EC8000

System configuration: Tray transport method (Load lock is option)
Substrate size: φ150mm maximum (Have it of load lock;greatest φ100mm)
Cathode: φ2" cathode ×3
Operation method: Auto pumping operation, manual transport/deposit operation
Footprint: W1800mm×D1100mm×H1550mm (standard specification)

EB1000

C 7100

High sensitivity and high power!
Adopted a new platform (newly developed TMP / Valve block), high sensitivity and high response type with FINE mode as the standard. Even higher power type with 500L/min multi-stage roots pump.

M-222LD-D-H_500

C3010

SPF-430H

EL3000

System configuration: Vertical Inline configuration

Applicable process module for one side will be as follows
• Anneal module
• Sputtering module

Substrate:
□650mm
□300mm
φ300mm

EL3400

I-4100MR

C-7010

I-1060

HC7100 is a sputtering equipment for GMR heads and TMR heads that utilizes the tunnel effect.
System configuration: Cluster type
Substrate size: φ150mm、φ200mm

HC7100

I-4100 SVII

M-232LD

Effectively consolidates magnetic head production processes.This is an integrated magnetic HEAD production equipment only possible with Canon ANELVA product lineup.

System configuration: Cluster type
Substrate size: φ150mm, φ200mm

HC7300

The Anelva ILC-1015 is a sputtering system manufactured by Canon/Anelva. It is used for semiconductor processing assembly

ILC-1015

ILC 1000

System configuration: Cluster type (up to three process chambers) C to C type
Substrate size: φ200mm maximum
Cathode: φ7.1" cathode (Up to 4. Varies depending on the module.)

Modules:
Offset rotary sputtering module (multi-cathode specification)
Offset rotary and revolutionary sputtering module
Etching module (preprocessing)
Preheating module (preprocessing)

EC7400

EC7000

System configuration: Load lock type tray transport method
Substrate size: φ200mm maximum
Cathode: φ4" cathode ×3 (Option: φ12.5" cathode ×1, φ4" cathode ×4)
Operation method: Fully automated (pumping, transport, deposition)

EB1100

I-1100 C 

System configuration: Cluster type
Substrate: Φ300 mm

NC7900

The Anelva ILC-1060 is a specific model of a magnetron sputtering system. It features  features a vacuum chamber that provides a controlled environment for thin film deposition. The ILC-1060 can accommodate a variety of target materials, such as metals, alloys, or compounds, depending on the specific application requirements

ILC-1060

Compact and Dry!
Low compact and dry type with diaphragm pump.

M-212LD-D

I 2300SRE

System configuration: Cluster type
Substrate: φ100mm, φ150mm
Main pump: Turbo Moleculer Pump (TMP)
Electric power: 3φ AC200V±10% 125A 50/60Hz
Cooling water: 30〜34L/min 0.2〜0.3MPa 15〜30℃
Compressed air: 0.5〜0.8MPa
Process Gas: 0.15〜0.4MPa
Throughput: 3.5min/set (It varies according to a process condition)
Weight: 3720kg (Main body)
Footprint: W3300mm×D5100mm (standard specification)

BC7000

High power!
High power type with increased power over the Model 212's roughing pump.

M-222LD

The Anelva I-1060 SVII PLUS-1 is a sputter coating equipment that provides users with precise metal film deposition capabilities. This sputtering system is used to physically vaporize metal pellets, which can then be deposited onto a substrate through reactive ionization equipment

I-1060 SVII PLUS-1

High sensitivity and high power!
high sensitivity and high response type with FINE mode as the standard.

M-222LD-D-H

High sensitivity and high power!
Adopted a new platform (newly developed TMP / Valve block).

CANON / ANELVA

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