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AIXTRON / GENUS StrataGem 200
  • AIXTRON / GENUS StrataGem 200
  • AIXTRON / GENUS StrataGem 200
  • AIXTRON / GENUS StrataGem 200
  • AIXTRON / GENUS StrataGem 200
  • AIXTRON / GENUS StrataGem 200
  • AIXTRON / GENUS StrataGem 200
描述
無描述
配置
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reaction
OEM 代工型號說明
未提供
文檔

無文檔

類別
ALD

上次驗證: 超過60天前

關鍵商品詳情

條件:

Used


作業狀態:

Installed / Running


產品編號:

104535


晶圓尺寸:

8"/200mm


年份:

2010


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

AIXTRON / GENUS

StrataGem 200

verified-listing-icon
已驗證
類別
ALD
上次驗證: 超過60天前
listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/f8697c43178d46bfba54d4345b305921_s84852969_mw.jpg
listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/c7abc9732368422cb44aa6bfd2f0229a_s84852974_mw.jpg
listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/fcb40d2be82d44d9aa0a58b4ab9d64bd_s84852971_mw.jpg
listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/ed4542bbd97c4db7ab07728dbd29dfb8_s84852972_mw.jpg
listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/9e9a513d8c4b4764b38cd9d74371da83_s84852973_mw.jpg
listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/19683b5246164cf29f94942faf611716_s51364380_mw.jpg
關鍵商品詳情

條件:

Used


作業狀態:

Installed / Running


產品編號:

104535


晶圓尺寸:

8"/200mm


年份:

2010


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述
配置
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reaction
OEM 代工型號說明
未提供
文檔

無文檔