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AIXTRON / GENUS StrataGem 200
    描述
    無描述
    配置
    HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reaction
    OEM 代工型號說明
    未提供
    文檔

    無文檔

    AIXTRON / GENUS

    StrataGem 200

    verified-listing-icon

    已驗證

    類別
    ALD

    上次驗證: 超過60天前

    關鍵商品詳情
    條件:

    Used

    作業狀態:

    Installed / Running

    產品編號:

    104535

    晶圓尺寸:

    8"/200mm

    年份:

    2010

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
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    AIXTRON / GENUS StrataGem 200

    AIXTRON / GENUS

    StrataGem 200

    ALD
    年份: 2010條件: 二手
    上次驗證超過60天前

    AIXTRON / GENUS

    StrataGem 200

    verified-listing-icon
    已驗證
    類別
    ALD
    上次驗證: 超過60天前
    listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/f8697c43178d46bfba54d4345b305921_s84852969_mw.jpg
    listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/c7abc9732368422cb44aa6bfd2f0229a_s84852974_mw.jpg
    listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/fcb40d2be82d44d9aa0a58b4ab9d64bd_s84852971_mw.jpg
    listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/ed4542bbd97c4db7ab07728dbd29dfb8_s84852972_mw.jpg
    listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/9e9a513d8c4b4764b38cd9d74371da83_s84852973_mw.jpg
    listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/19683b5246164cf29f94942faf611716_s51364380_mw.jpg
    關鍵商品詳情
    條件:

    Used

    作業狀態:

    Installed / Running

    產品編號:

    104535

    晶圓尺寸:

    8"/200mm

    年份:

    2010

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    無描述
    配置
    HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reaction
    OEM 代工型號說明
    未提供
    文檔

    無文檔

    類似上架商品
    查看全部
    AIXTRON / GENUS StrataGem 200

    AIXTRON / GENUS

    StrataGem 200

    ALD年份: 2010條件: 二手上次驗證:超過60天前