LAM RESEARCH CORPORATION

The 2300 Versys Metal L is part of Lam’s Versys Metal product family, which provides high-productivity capability on a flexible platform for performing critical etch steps in the semiconductor manufacturing process. The technology used is Reactive Ion Etch, and it provides solutions for interconnects. The product is designed to address industry challenges such as achieving repeatable profile and critical dimension control while maintaining high-volume, low-cost production. It offers superior CD, profile uniformity, and uniformity control, enabled by a symmetrical chamber design with independent process tuning features. Additionally, it has high availability, high yield, and exceptional process repeatability with proprietary chamber cleaning technology. The product is upgradable for low cost of ownership over several device generations. Key applications include TiN metal hardmask, high-density aluminum line, and aluminum pad.

LAM RESEARCH CORPORATION

2300 VERSYS METAL L

Dry / Plasma Etch

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2300 VERSYS METAL L

Dry / Plasma Etch

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