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APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
    描述
    HDD missing
    配置
    Details attached.
    OEM 代工型號說明
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
    文檔

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

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    已驗證

    類別
    PECVD

    上次驗證: 超過60天前

    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    29754


    晶圓尺寸:

    12"/300mm


    年份:

    2009


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    類似上架商品
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    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD
    年份: 2009條件: 二手
    上次驗證超過60天前

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    verified-listing-icon
    已驗證
    類別
    PECVD
    上次驗證: 超過60天前
    listing-photo-73474a58918640c4ad3865c59545d384-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/44042/73474a58918640c4ad3865c59545d384/e6427808002e4a0989bf1397d8728911_0f707ee797304c2d9d216881ffdedeca1105c_f.jpeg
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    listing-photo-73474a58918640c4ad3865c59545d384-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/44042/73474a58918640c4ad3865c59545d384/b821b7cc87cb4d41b8d590f278524b3f_88f035179f824b94a953ed2daa0345b21105c_f.jpeg
    關鍵商品詳情

    條件:

    Used


    作業狀態:

    未知


    產品編號:

    29754


    晶圓尺寸:

    12"/300mm


    年份:

    2009


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    HDD missing
    配置
    Details attached.
    OEM 代工型號說明
    Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
    文檔
    類似上架商品
    查看全部
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD年份: 2009條件: 二手上次驗證:超過60天前
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD年份: 0條件: 二手上次驗證:21 天前
    APPLIED MATERIALS (AMAT) PRODUCER GT PECVD

    APPLIED MATERIALS (AMAT)

    PRODUCER GT PECVD

    PECVD年份: 0條件: 二手上次驗證:21 天前