概述

The Varian 350D is a medium current ion implanter that is capable of implanting Boron (B11 or BF2) or Phosphorous (P31) in 4” or 6” wafers with doses of 1E12 to 5E15. Implant energy levels can be adjusted from 10KeV and 200 KeV1. It is set up for 100mm and 150mm round substrates. It has applications in power devices, memory, logic, analog, discrete and MEMS.