概述

The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.