概述

SOPHI-30 is a cluster type, low-acceleration, and high-density ion implanter that is designed to support thin wafers. It has no mass separator and offers several advantages over conventional implanters, including high throughput, half the price, and a footprint that is 1/3 the size of conventional implanters. SOPHI-30 is primarily used in the power device manufacturing process for IGBT and can handle wafer sizes of up to 200mm. Its unique features make it an ideal choice for those looking for a cost-effective and efficient ion implantation system.