November 10, 2011 – Applied Materials, Inc. announced the successful completion of its acquisition of Varian Semiconductor Equipment Associates, Inc. 
Varian is the leading supplier of ion implantation equipment used by chip makers and has been applying this technology to crystalline silicon wafers for photovoltaic panels. Varian will operate as a business unit of Applied's Silicon Systems Group.

APPLIED MATERIALS (AMAT) / VARIAN

VIISta HC

The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor’s VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become an attractive solution for critical low-energy, high-dose applications, such as DRAM (dynamic random access memory) polysilicon gate doping.

VIISta PLAD

The Varian 120XP High Current Ion Implanter it can handle wafer sizes of 100mm, 125mm, and 150mm. It is optimized for maximum dose uniformity and repeatability, has reduced particulate contamination, and is a production-proven solution with the industry’s lowest cost of ownership (CoO) and high throughput.

120XP

The Varian 160XP is a high current ion implanter used in semiconductor manufacturing. It was manufactured by Varian in 1991 and operates on a voltage of 208 volts with a phase of 3+1. It is part of the XP series of ion implant systems by Varian.

160XP

AMAT / APPLIED MATERIALS XR 80S LEAP II is a Implanters system. The XR 80 can produce wafer size of 6”.
Precision Implant xR80

XR80

The Varian 350D is a medium current ion implanter that is capable of implanting Boron (B11 or BF2) or Phosphorous (P31) in 4” or 6” wafers with doses of 1E12 to 5E15. Implant energy levels can be adjusted from 10KeV and 200 KeV1. It is set up for 100mm and 150mm round substrates. It has applications in power devices, memory, logic, analog, discrete and MEMS.

350D

The VIISion 80 ion implanter beam line incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.

VIISion 80

 E500HP is a Medium Current Ion Implanter which processes one or two cassettes of wafers as a batch, a single wafer at a time.

E500-HP

Medium Current
The VARIAN E 500 is Implanters system. VARIAN E 500 can be used with 150mm wafer size.

E500

The high current VIISta HCP series single wafer ion implanter provides the highest productivity and best contamination performance. In addition, these systems feature implant angle accuracy, beam steering correction and high-tilt angle capability – all of which are required for advanced device fabrication. The VIISta HCP has excellent process control capability for advanced ultra shallow junction applications, and can be used for source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification applications.

VIISta HCP

The high current VIISta 80HP and VIISta 80 ion implanters feature a patented dual magnet ribbon beam architecture that currently provides the highest productivity, implant angle accuracy and 60 degree tilt angle capability—all of which are required for advanced device fabrication. Both tools have excellent process control capability for advanced ultra shallow junction applications, and can be used for source/drain, source drain extension, gate doping, pre-amorphization, and materials modification applications. Varian Semiconductor’s other high current tools include the VIISion 80 PLUS and VIISion 200 PLUS ion implanters.

VIISta 80

The high current VIISta 80HP and VIISta 80 ion implanters feature a patented dual magnet ribbon beam architecture that currently provides the highest productivity, implant angle accuracy and 60 degree tilt angle capability—all of which are required for advanced device fabrication. Both tools have excellent process control capability for advanced ultra shallow junction applications, and can be used for source/drain, source drain extension, gate doping, pre-amorphization, and materials modification applications. Varian Semiconductor’s other high current tools include the VIISion 80 PLUS and VIISion 200 PLUS ion implanters.

The VIISTA platform supports an entire line of implant products. The platform was designed to accommodate four different products (high current, medium current, high energy, and plasma doping), maximizing commonality.

VIISta 80HP

The AMAT / APPLIED MATERIALS / VARIAN VIISta HE is a single-wafer high energy implanter. The VIISta HE is especially popular for high volume DRAM production but also serves the full range of semiconductor implant applications.

The high energy VIISta HE features True ZeroTM degree implant and low contamination. The Varian Semiconductor high energy portfolio’s True ZeroTM capability provides a distinct advantage for semiconductor manufacturers that need increased device packing density in high-performance devices. The VIISta HE has outstanding process accuracy, offers excellent productivity, uniformity, angle control and medium current back-up flexibility. Varian Semiconductor’s high energy products cover retrograde well, triple well, buried layers, and pocket applications.


VIISta HE

E1000

200-DF4

The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.

XR80 LEAP II

The VARIAN VISTA 810XP is the Implanters system. the VARIAN VISTA 810XP can be used with 300mm wafer sizes.

Recognized as the industry benchmark for medium current performance and productivity, Varian Semiconductor’s single wafer VIISta 810XP series ion implanters provide superior overall throughput, precision doping capability and unmatched contamination control. These systems excel at threshold voltage (“Vt”), channel, retrograde well, pocket, and halo implants.

VIISta 810XP

G1500

The Kestrel 650 and 750 systems enable manufacturers to achieve high MeV yields and broad energy ranges with low operating costs. Kestrel instruments have simple system approaches, expanded energy ranges to cover the growing market requirements, and small footprints for optimal facility flexibility.

KESTREL 650

The E500-EHP is a medium current ion implanter made by AMAT (Varian). It processes one or two cassettes of wafers as a batch, a single wafer at a time.

E500-EHP

VIISta HCS

High Current 
VARIAN VIISION 200+ is a Implanters system. The VIISION 200+ can produce wafer size of 200 mm.

VIISion 200+

300XP

Kestrel 750 is a High Energy ION Implanter system that can process the wafer size of 8”.

KESTREL 750

The VIISta 900XP delivers precision, cleanliness, productivity, and production worthiness in the medium current ion implantation market. In addition, an extended energy range that allows for operation at 300keV and 600keV with + and ++ charge states, respectively, makes the VIISta 900XP more productive than traditional batch high-energy tools for sub-MeV well applications.

VIISTA 900XP

The Varian VIISta 900 3D system is the industry’s flagship medium-current ion implanter for high-volume manufacturing beyond the 2xnm node. Its beam-line architecture has been specially designed with the angle accuracy and beam shape control necessary for exact dopant placement and minimal within-wafer and wafer-to-wafer variability for applications in logic finFETs and 3D memory structures. These capabilities also benefit CMOS image sensor technology as well as the most advanced planar structures.

VIISta 900-3D

160-10

80XP

VARIAN VIISta 810Xer is a Implanters system. The VIISta 810Xer can produce wafer size of 12”.

VIISta 810XER

The VARIAN VIISta 3000HP is a Implanters system. The VIISta 3000HP can be used with 8" wafers wafer sizes.

The high-energy VIISta 3000HP and VIISta 3000 ion implanters have outstanding process accuracy for advanced device technologies, offering excellent productivity, uniformity, zero degree implantation and optimal process matching capabilities. The VIISta 3000 series products are the only high energy (“MeV”) implanters available on the market offering true zero capability needed in charged coupled devices (“CCD”) and other high performance devices. The high energy products cover retrograde well, triple well, buried layers, and pocket applications. Varian Semiconductor’s other high-energy tool is the Kestrel II-750 ion implanter.

VIISta 3000HP

E220-EHPi

The AMAT / APPLIED MATERIALS XR 200S is a high current ion implanter. It can be configured for nodes ranging from 125mm-200mm.

XR200S

VIISta 80EHP

The VIISta 3000XP, built on the acclaimed Varian dual-magnet single-wafer architecture, delivers the angle precision required for advanced high-energy applications. The VIISta 3000XP is also ideally suited for medium-current back-up. The system features the same single-wafer end station, dosimetry system, and wafer positioning system as the market-leading medium-current VIISta 900XP.

VIISta 3000XP

CF-3000

Extensions of the basic xR80 architecture.

XR120

VIISON 80/200

The AMAT VIISTA 810XE (formerly Varian VIISTA 810XE) is part of a single wafer ion implanter series. The VIISTA 810XE is a medium current ion implanter. The VIISTA 810XE has throughput >400 wafers per hour, and an optional extended energy range to 900keV for covering many well applications. The VIISta 810XE also features enhanced beam currents to improve productivity for low energy implants, a patented parallel path wafer handling architecture, high velocity dose control scanning system, precision doping capability and unmatched contamination control.

VIISta 810XE

The Varian E220 is a medium current ion implanter that was used for research and development purposes. It was first introduced in 1993 and has had minimal usage. The tool has undergone several updates, including a new monitor, rebuilt turbo, and replaced gas box.

E220

E220-EHP

VIISta XP2

Precision Implant xR LEAP extensions of the basic xR80 architecture.

XR LEAP

VIISta P2LAD

DF-3000

The XR120S is a 300mm Batch High Current Ion Implanter from Applied Materials. It provides a low risk extension to 300 mm with maximum process transparency by sharing a common beamline family with the existing 200 mm products.

XR120S

The VIISta 810 HP provides precise total incident angle and dosimetry control to enable tighter distribution of electrical device parameters and a 50% reduction in contamination to enhance device yields. The generic VIISta platform covers the range of ion implantation energies from 200eV through to 3.75 MeV. For medium current implants in the middle of that range, the VIISta 810 HP provides control of Vt and halo implants, improving the consistency of operating characteristics and yield across the wafer, the company claimed.

VIISta 810HP

VIISTA PLAD T2 implanter and monitor processes 12” Wafers with its single wafer plasma doping system. The plasma implant voltage ranges from 200V to 10KV. It uses Ramped Wafer Bias that is programmed for optimum Dopant Profile Control and real-time magnetically suppressed Faraday closed loop dose control system.

VIISta PLAD T2

VIISTA platform has been designed to accommodate four different products: high current, medium current, high energy, and plasma doping

VIISta 80MC

E220HP is Medium Current Ion Implanter which processes one or two cassettes of wafers as a batch, a single wafer at a time.

E220-HP

E1000HP

It is an Implanter system that can produce wafer sizes of 6 inches.

XR80S LEAP II

VIISta 900XPT

The high-energy VIISta 3000HP and VIISta 3000 ion implanters have outstanding process accuracy for advanced device technologies, offering excellent productivity, uniformity, zero degree implantation and optimal process matching capabilities. The VIISta 3000 series products are the only high energy (“MeV”) implanters available on the market offering true zero capability needed in charged coupled devices (“CCD”) and other high performance devices. The high energy products cover retrograde well, triple well, buried layers, and pocket applications. Varian Semiconductor’s other high-energy tool is the Kestrel II-750 ion implanter.

VIISta 3000

VIISta 1500H

VIISta 60HC

Tandetron  1520  and Genus 1510. Introduced in 1995 and 1992, respectively, the  Tandetron  1520  and  Genus  1510  were  Genus' previous generation MeV ion implant  products.
The use of the high energy (MeV) implantation process has been expanded into mass semiconductor production lines in the past couple of years mainly for process simplification and associated cost reduction. In order to meet this requirement, Genus Inc. has introduced its third generation high energy ion implanter "Tandetron 1520" with a significantly reduced system foot print compared to its predecessors, the Genus G1500 and the G1510 MeV implanters.

TANDETRON 1520

The xR80S is an ion implanter used in semiconductor device production. It is capable of delivering superior implantation precision and repeatability, with an integrated monitor system and user-friendly interface providing control and monitoring accuracy.

XR80S

E500-EHPi

The VARIAN KESTREL is an Implanters system. The VARIAN KESTREL can be used with an 8” wafer size, and the ion implanters size is 8”.

KESTREL

VIISta XP

The VIISion 80 is a high current ion implanter designed by Varian. It is used for ion implantation, which is a process used in the manufacture of semiconductors to modify the properties of materials by introducing impurities or dopants into the material. The 80 keV VIISion ion implantation system can autotune and implant high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems.

VIISion 80+

Varian Semiconductor’s single wafer VIISta 810EHP and VIISta 810HP ion implanters provide superior overall throughput, precision doping capability and unmatched contamination control. Both tools excel at Vt, channel, retrograde well, pocket, and halo implants. Varian Semiconductor’s other medium current tools include the EHP-220, EHPi-220, EHP-500 and EHPi-500 ion implanters.

VIISta 810EHP

The VIISta 810 is a 300 mm medium current ion implanter. It was designed to address the challenges posed by the transition to 300 mm diameter substrates with device line widths below 180 nm.

VIISta  810

The AMAT / APPLIED MATERIALS VIISTA TRIDENT is a single-wafer high-current ion implantation solution. The AMAT / APPLIED MATERIALS VIISTA TRIDENT system enables <2xnm transistors particularly at 28nm and 20nm foundries. Key features of the Trident platform include ion source designed for fast tuning of a wide variety of species both dopant and non-dopant, beam height modulation, uniformity enhancement module for improving low energy beam uniformity, horizontal and vertical angle control, an energy purity module, and cryo-implant.

VIISta TRIDENT

VIISta 80EHPi

KESTREL 750 II

VARIAN VISION 200 is a high energy ION implanter machine built on the dual-magnet architecture and minimal heavy metals and particle production.

VIISion 200

DF-300XP

The Varian 180XP is designed to deliver high-current ion beams for ion implantation processes. It offers precise control over ion beam characteristics, such as energy, dose, and angle of incidence, to enable the creation of precise dopant profiles in the semiconductor material.

180XP

Tandetron  1520  and Genus 1510. Introduced in 1995 and 1992, respectively, the  Tandetron  1520  and  Genus  1510  were  Genus' previous generation MeV ion implant  products.
The 1510 is a second-generation high energy ion implanter and is an evolution of the market leader Genus 1500 system. In this work, a review of the key performance characteristics of the system are presented from a users point of view. Included are parameters such as beam current, beam stability, implant profiles, wafer throughput, particle performance, ease of operation, and serviceability. 

G1510

The AMAT XR200 is a high current ion implanter that can be configured for nodes ranging from 125mm-200mm.

APPLIED MATERIALS (AMAT) / VARIAN

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