November 10, 2011 – Applied Materials, Inc. announced the successful completion of its acquisition of Varian Semiconductor Equipment Associates, Inc. 
Varian is the leading supplier of ion implantation equipment used by chip makers and has been applying this technology to crystalline silicon wafers for photovoltaic panels. Varian will operate as a business unit of Applied's Silicon Systems Group.

APPLIED MATERIALS (AMAT) / VARIAN

VIISta HC

The Varian 120XP High Current Ion Implanter it can handle wafer sizes of 100mm, 125mm, and 150mm. It is optimized for maximum dose uniformity and repeatability, has reduced particulate contamination, and is a production-proven solution with the industry’s lowest cost of ownership (CoO) and high throughput.

120XP

The Varian 160XP is a high current ion implanter used in semiconductor manufacturing. It was manufactured by Varian in 1991 and operates on a voltage of 208 volts with a phase of 3+1. It is part of the XP series of ion implant systems by Varian.

160XP

The Varian 350D is a medium current ion implanter that is capable of implanting Boron (B11 or BF2) or Phosphorous (P31) in 4” or 6” wafers with doses of 1E12 to 5E15. Implant energy levels can be adjusted from 10KeV and 200 KeV1. It is set up for 100mm and 150mm round substrates. It has applications in power devices, memory, logic, analog, discrete and MEMS.

350D

The VIISta HCP series is a high current single wafer ion implanter that offers high productivity and excellent contamination performance. It features implant angle accuracy, beam steering correction, and high-tilt angle capability, making it suitable for advanced device fabrication. With its excellent process control capability, the VIISta HCP is ideal for advanced ultra shallow junction applications such as source/drain, source/drain extension, gate doping, pre-amorphization, and materials modification. It has an energy range of 200 eV to 60 keV and a dose range of 1 x 10^13 to 5 x 10^16 ions/cm^-2.

VIISta HCP

The Varian E220 is a medium current ion implanter that was used for research and development purposes. It was first introduced in 1993 and has had minimal usage. The tool has undergone several updates, including a new monitor, rebuilt turbo, and replaced gas box.

E220

The 300 XP evolved from the industry-standard Varian 350D medium current implanter, which was the tool of choice during the early 1980's. The 300 XP was introduced in 1986 with process recipe control that assured error-free setups, independent dual end stations with increased reliability and throughput, and improved dosimetry.

300XP

 E500HP is a Medium Current Ion Implanter which processes one or two cassettes of wafers as a batch, a single wafer at a time.

E500-HP

The E500-EHP is a medium current ion implanter made by AMAT (Varian). It processes one or two cassettes of wafers as a batch, a single wafer at a time.

E500-EHP

The VARIAN E500 is a medium current ion implanter system designed for use with 150mm wafer sizes. This system is capable of delivering precise and accurate implantation of ions into semiconductor wafers, making it an essential tool in the manufacturing of semiconductor devices.

E500

The VIISta HE is a single-wafer high energy implanter by Varian Semiconductor. It is popular for high volume DRAM production and serves a range of semiconductor implant applications. It features True Zero degree implant, low contamination, and outstanding process accuracy. The True Zero capability provides an advantage for increased device packing density in high-performance devices. The VIISta HE offers excellent productivity, uniformity, angle control, and medium current back-up flexibility. It covers retrograde well, triple well, buried layers, and pocket applications.

VIISta HE

The Varian 180XP is designed to deliver high-current ion beams for ion implantation processes. It offers precise control over ion beam characteristics, such as energy, dose, and angle of incidence, to enable the creation of precise dopant profiles in the semiconductor material.

180XP

The VIISion 80 ion implanter beam line incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.

VIISion 80

The high current VIISta 80HP and VIISta 80 ion implanters feature a patented dual magnet ribbon beam architecture that currently provides the highest productivity, implant angle accuracy and 60 degree tilt angle capability—all of which are required for advanced device fabrication. Both tools have excellent process control capability for advanced ultra shallow junction applications, and can be used for source/drain, source drain extension, gate doping, pre-amorphization, and materials modification applications. Varian Semiconductor’s other high current tools include the VIISion 80 PLUS and VIISion 200 PLUS ion implanters.

VIISta 80

The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor’s VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become an attractive solution for critical low-energy, high-dose applications, such as DRAM (dynamic random access memory) polysilicon gate doping.

VIISta PLAD

The single wafer high current VIISta 80HP for advanced devices and VIISta 80 ion implanters feature a patented dual magnet ribbon beam architecture that currently provides the highest productivity, implant angle accuracy and 60 degree tilt angle capability—all of which are required for advanced device fabrication. Both tools have excellent process control capability for advanced ultra shallow junction applications, and can be used for source/drain, source drain extension, gate doping, pre-amorphization, and materials modification applications. Varian Semiconductor’s other high current tools include the VIISion 80 PLUS and VIISion 200 PLUS ion implanters.

VIISta 80HP

The Varian E1000HP is an advanced ion implanter and monitor system. It offers a high-efficiency electrostatic accelerator, precise beam voltage control, multiple beam current and dose ranges, and sophisticated diagnostic and analysis tools for precise and consistent implantation.

E1000HP

The VIISta 810 is a 300 mm medium current ion implanter. It was designed to address the challenges posed by the transition to 300 mm diameter substrates with device line widths below 180 nm.

VIISta  810

The Varian VIISta 900 3D system is the industry’s flagship medium-current ion implanter for high-volume manufacturing beyond the 2xnm node. Its beam-line architecture has been specially designed with the angle accuracy and beam shape control necessary for exact dopant placement and minimal within-wafer and wafer-to-wafer variability for applications in logic finFETs and 3D memory structures. These capabilities also benefit CMOS image sensor technology as well as the most advanced planar structures.

VIISta 900-3D

The VIISta 810XEr is a medium current ion implanter with an energy range of 2keV to 810keV. It is production-proven and is the preferred choice for medium current applications. It is ideal for moderate capacity needs or for adding higher capacity to match future ramp requirements.

VIISta 810XER

The AMAT VIISTA 810XE (formerly Varian VIISTA 810XE) is part of a single wafer ion implanter series. The VIISta 810XE is a highly productive medium current ion implanter that operates within the energy range of 2keV to 810keV, with an optional range of 2keV to 900keV. It is considered the industry standard for its maximum throughput of over 400 wafers per hour, precise doping with a patented dose control system, and unmatched contamination control with a unique dual magnet beamline.

VIISta 810XE

DF-300XP

E220-EHP

VIISta P2LAD

The VIISta 810XP is the industry standard in productive ion implant, providing the highest overall throughput, precise doping, and unmatched contamination control. It is the most productive tool in the fab, with a 500wph medium current ion implanter and an energy range of 2keV – 810keV.

VIISta 810XP

CF-3000

The EHPi-500 with a wider energy range up to 780 keV, 10% higher maximum throughputs, and new statistical process monitoring capabilities. This industry-proven system offers the highest industry throughput and the widest energy range....all in the most reliable medium current system available for features sizes down to 0.18 micron and wafer sizes up to 200mm.

E500-EHPi

The Varian E1000 is a high current implanter that leverages Varian’s pioneering single-wafer high current technology to deliver high yields and the industry’s best productivity. Innovations on the dual-magnet ribbon beam architecture improve beam line transmission, on-wafer beam utilization, and beam current output.

E1000

VIISON 80/200

The VIISta Trident system is the semiconductor industry’s most advanced single-wafer high-current implanter. The system leverages the VIISta high-current ion implant platform’s production-proven, single-wafer architecture to set new benchmarks for energy contamination, uniformity, and angle and dose rate control to meet advanced node requirements with high yield and the highest productivity

VIISta TRIDENT

E220-EHPi

VIISta 1500H

VIISta HCS

Tandetron  1520  and Genus 1510. Introduced in 1995 and 1992, respectively, the  Tandetron  1520  and  Genus  1510  were  Genus' previous generation MeV ion implant  products.
The 1510 is a second-generation high energy ion implanter and is an evolution of the market leader Genus 1500 system. In this work, a review of the key performance characteristics of the system are presented from a users point of view. Included are parameters such as beam current, beam stability, implant profiles, wafer throughput, particle performance, ease of operation, and serviceability. 

G1510

DF-3000

80XP

The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.

VIISion 200

The VIISta 810 HP provides precise total incident angle and dosimetry control to enable tighter distribution of electrical device parameters and a 50% reduction in contamination to enhance device yields. The generic VIISta platform covers the range of ion implantation energies from 200eV through to 3.75 MeV. For medium current implants in the middle of that range, the VIISta 810 HP provides control of Vt and halo implants, improving the consistency of operating characteristics and yield across the wafer, the company claimed.

VIISta 810HP

E220HP is Medium Current Ion Implanter which processes one or two cassettes of wafers as a batch, a single wafer at a time.

E220-HP

KESTREL

G1500

The VIISta 3000XP, built on the acclaimed Varian dual-magnet single-wafer architecture, delivers the angle precision required for advanced high-energy applications. The VIISta 3000XP is also ideally suited for medium-current back-up. The system features the same single-wafer end station, dosimetry system, and wafer positioning system as the market-leading medium-current VIISta 900XP.

VIISta 3000XP

VIISta XP2

VIISta 900XPT

VARIAN VIISION 200+ is a high current implanters system. The VIISION 200+ can produce wafer size of 200 mm.

VIISion 200+

The VIISta 810EHP is a single wafer ion implanter manufactured by Varian Semiconductor. It is designed to provide superior overall throughput, precision doping capability, and unmatched contamination control. The tool excels at various types of implants, including Vt, channel, retrograde well, pocket, and halo implants. This makes it a versatile and reliable choice for semiconductor manufacturing.

VIISta 810EHP

The Kestrel 650 and 750 systems enable manufacturers to achieve high MeV yields and broad energy ranges with low operating costs. Kestrel instruments have simple system approaches, expanded energy ranges to cover the growing market requirements, and small footprints for optimal facility flexibility.

KESTREL 650

VIISTA platform has been designed to accommodate four different products: high current, medium current, high energy, and plasma doping

VIISta 80MC

The Kestrel 750 is a high energy ion implanter that is the industry’s most cost-effective MeV implanter. It operates in the range of 10 - 3750 keV. Varian offers device makers the lowest cost, most practical MeV production solution with its Kestrel high energy implanter. Kestrel has distinct advantages in cost of ownership with its compact design, unique DC Tandetron accelerator, and large implant chamber. The simplicity of the Kestrel design sets this system apart from other MeV implanters and makes it the tool of choice for production MeV implants.

KESTREL 750

VIISta 60HC

Tandetron  1520  and Genus 1510. Introduced in 1995 and 1992, respectively, the  Tandetron  1520  and  Genus  1510  were  Genus' previous generation MeV ion implant  products. The use of the high energy (MeV) implantation process has been expanded into mass semiconductor production lines in the past couple of years mainly for process simplification and associated cost reduction. In order to meet this requirement, Genus Inc. has introduced its third generation high energy ion implanter "Tandetron 1520" with a significantly reduced system foot print compared to its predecessors, the Genus G1500 and the G1510 MeV implanters.

TANDETRON 1520

160-10

The VIISta 900XP delivers precision, cleanliness, productivity, and production worthiness in the medium current ion implantation market. In addition, an extended energy range that allows for operation at 300keV and 600keV with + and ++ charge states, respectively, makes the VIISta 900XP more productive than traditional batch high-energy tools for sub-MeV well applications.

VIISTA 900XP

VIISta XP

VIISta 80EHPi

The Kestrel 750 II is a high current ion implanter manufactured by Varian. It is used for semiconductor processing and can process wafers of size 8”.

KESTREL 750 II

The high-energy VIISta 3000HP and VIISta 3000 ion implanters have outstanding process accuracy for advanced device technologies, offering excellent productivity, uniformity, zero degree implantation and optimal process matching capabilities. The VIISta 3000 series products are the only high energy (“MeV”) implanters available on the market offering true zero capability needed in charged coupled devices (“CCD”) and other high performance devices. The high energy products cover retrograde well, triple well, buried layers, and pocket applications. Varian Semiconductor’s other high-energy tool is the Kestrel II-750 ion implanter.

VIISta 3000

VIISTA PLAD T2 implanter and monitor processes 12” Wafers with its single wafer plasma doping system. The plasma implant voltage ranges from 200V to 10KV. It uses Ramped Wafer Bias that is programmed for optimum Dopant Profile Control and real-time magnetically suppressed Faraday closed loop dose control system.

VIISta PLAD T2

The VIISta 3000HP is a high-energy ion implanter from Applied Materials (AMAT) / Varian. It offers excellent productivity, uniformity, zero-degree implantation, and optimal process matching capabilities for advanced device technologies.

VIISta 3000HP

200-DF4

VIISta 80EHP

The VIISion 80 is a high current ion implanter designed by Varian. It is used for ion implantation, which is a process used in the manufacture of semiconductors to modify the properties of materials by introducing impurities or dopants into the material. The 80 keV VIISion ion implantation system can autotune and implant high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems.

APPLIED MATERIALS (AMAT) / VARIAN

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