概述

SOPHI-400 is a high-energy ion implanter that is capable of implanting ions at energies up to 2400 keV. It is a cluster type implanter, which means it can handle thin wafers and is compatible with wafer sizes up to 200mm. The system features a parallel beam and is commonly used in the power device manufacturing process, specifically for IGBTs. Its high energy and compatibility with thin wafers make it a versatile tool for a variety of applications.