Designs, manufactures and services ion implantation and other processing equipment used in the fabrication of semiconductor chips.

Optima HD product (for high current applications) a single wafer was introduced in 2006, which was upgraded to the Optima HDx in 2009.

AXCELIS

OPTIMA HDx

NV-8200P, high current, parallel beam scan, uses GSD-A end station.

NV-8200P

The NV-GSD/HE is a high energy implanter from Eaton/Axcelis. It is an evolutionary step from the NV-GSD/HE and is designed to support all applications covered by the NV-GSD/HE in addition to research and development activities for epi-replacement, manufacturing of deep triple well structures, and production of deep implants for CCD devices. The NV-GSD/HE is a linear accelerator-based high energy implanter. It delivers beam currents of B+ in excess of 1 pmA at energies approaching 1.7 MeV, B++ to energies approaching 3 MeV and P+++ energies approaching 5 MeV. The beamline of the NV-GSD/HE is designed to be field upgradeable to further extend the energy ranges of all species, if required, to match future process requirements. It offers fully automated operation, high throughput, excellent medium current implanter process performance, excellent control over differential channeling, and unsurpassed beam purity.

NV-GSD HE

The Eaton/Axcelis GSD 100 is an ion implanter used in the semiconductor industry. The Eaton/Axcelis GSD 100 is used for 8-inch wafers.

GSD 100

NVGSD-80 high-current ion implanter is equipped with a loadlock high-throughput end station (Gyro Super Disk or GSD).

NV-GSD-80

NV 6200AV

NV 6200

200mm high tilt and medium current applications for all chips.

NV-8250HT

OPTIMA HD, which was released in early 2006. Use the term “high dose” or “HD” in connection with this product because the Optima HD fulfills all traditional high current requirements while extending its capability in two directions. In order to maximize utilization and flexibility, the Optima HD can process some traditional mid current implants. In addition, the Optima HD is extendable into ultra-low energy applications to satisfy future process requirements.

OPTIMA HD

The Eaton Nova NV-10-160 is a high energy Ion Implanter. Bare silicon wafers were implanted in an Eaton Nova 10-160 ion implanter at 60 keV energy with doses in the range 1-5∙1015cm-2 and annealed at 600°C for 20 min. 

NV 10-160

NV-6200A

OPTIMA MD

The Eaton/Axcelis GSD 200 is a high current implanter with a maximum energy of 180KeV and can handle wafers up to 8 inches in size. It is part of the GSD platform, which is the industry benchmark for the longest manufactured and supported batch ion implanter. Ion implantation is a surface modification technology that involves the bombardment of ionized species into the first atomic layers of a solid. It can introduce different species into a substrate independently of thermodynamic limitations. It can change chemical or tribological properties of the surface, such as hardness, wear resistance, resistance to chemical attack, and reduced friction. It can also improve the oxidation resistance of coatings by forming a dense Al2O3 scale. It is widely used for applications in micro-electronics, optics, bio-materials, and doped semiconductor materials.

GSD 200

NV 20A

EATON NOVA / AXCELIS NV 10-80 is a high Ion Implanters system. NV 10-80 can be used with 6” wafer size.

NV 10-80

The LEX3-II high-current ion implanter supporting 300-mm wafers with increased beam current at an extremely low energy.

LEX3-II

 Purion VXE offers a higher energy range.

PURION VXE

NV-10SD high-current ion implanter is equipped with a single large wafer-disk end station (Super Disk or SD).

NV-10SD

GSD ULTRA

 NV-GSD III-90E low-energy, beam current enhanced, high-current ion implanter.

NV-GSD III-90E

Paradigm XE, high energy version, is the standard tool offering for 300 mm wafers.

PARADIGM XE

the Optima XE, was released in the fourth quarter of 2007 and upgraded to the Optima XEx in 2009. The Optima XEx combines Axcelis' production-proven RF Linac high energy, spot beam technology with a high-speed, state-of-the-art single wafer endstation, enabling unmatched throughput. Axcelis' advanced spot beam ensures that all points across the wafer see the same beam at the same beam angle, resulting in exceptional process control and maximum yield. 

OPTIMA XEx

A de facto standard of high-current ion implanter featuring a post-deflection acceleration system, covering up to some medium-current range and supporting various applications.
- High-Current Ion Implanter
- Supports for 5, 6, and 8-inch wafers
- Supports for a wide range of implantation energy, from 2 to 180 keV (equipped with a post-deflection acceleration mechanism)
- Reliable batch transfer system
- Highly effective throughput
- Reliable high-dose control accuracy
- High beam quality with low metal contamination and low cross-contamination
- High reliability, high maintainability

NV-GSD III-180

NV-GSD-A-80

OPTIMA MDxt

NV-10 high-current ion implanter supporting 150-mm wafers.

NV-10

Purion XE, high energy system, combines Axcelis' production-proven RF Linac high energy, spot beam technology with the Purion platform. 

PURION XE

High energy implanter. 
 processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability.
 A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.

NV-GSD HE3

NV1000

Purion XEmax—Dual LINAC design with patented Boost TechnologyTM for the highest energies up to 15 MeV.

PURION XEmax

The Optima HE is a multi-wafer high energy tools.

OPTIMA HE

The Eaton/Axcelis NV GSD-200e2 is a standard high current implanter with a maximum energy of 180KeV and can handle wafers of size 6"-8".

NV GSD-200E2

NV 1-40

NV GSD-300E

Purion M medium current ion implant system. This system offer industry leading purity, precision and productivity through enhanced single magnet scanned spot beam architecture at a higher productivity (500 wafer per hour throughput) and lower cost of ownership than competitive offerings, in addition to other advantages.

PURION M

The LEX3 300-mm extremely low-energy ion, high-current implanter.

LEX3

PURION EXE

ORion NV-6072, for low-temperature polysilicon TFT-LCD.

ORion NV-6072

A 200-eV class, extremely low-energy high-current ion implanter.

NV-MC3 300mm high tilt and medium current applications for all chips.

NV-MC3

NV GSD 200E

NV 8200

HC3 was co-developed with Axcelis' joint-venture partner Sumitomo Eaton Nova (SEN), representing a second-generation 300-mm high-current system.

NV-GSD-HC3

PURION H200

PURION DRAGON

SUMMIT 300

NV GSD

ORion II NV-7392 ion implanter for flat panels.

ORion II NV-7392

The Eaton/Axcelis GSD 160 is a high energy ion Implanter used in the semiconductor industry. 

GSD 160

The NV-GSD III-90 high-current ion implanter serving as the global standard, which achieved high throughput and a compact size with the adoption of a newly developed beam line.

NV-GSD III-90

1-keV class, low-energy high-current ion implanter.

NV-GSD-LE

HC3 ULTRA

ORion II NV-6275 ion implanter for flat panels.

ORion II NV-6275

200mm high current implanter for low energy applications.

GSD III-LED

PARADIGM

Purion H is a high current ion implanter. The Purion H fulfills all traditional high current requirements while extending beyond traditional high current energy and dose ranges. In order to maximize utilization and flexibility, the Purion H can process some traditional mid current implants. In addition, the Purion H is extendable into ultra-low energy applications to satisfy future process requirements including leakage current performance. 

PURION H

The NV-GSD/VHE is Eaton’s next generation, linear accelerator-based 200mm very high energy implantation for logic, memory chips and FLASH memory chips. It is designed to support all applications covered by the NV-GSD/HE in addition to research and development activities for epi-replacement, manufacturing of deep triple well structures, and production of deep implants for CCD devices. It delivers beam currents of B+ in excess of 1 pmA at energies approaching 1.7 MeV, B++ to energies approaching 3 MeV and P+++ energies approaching 5 MeV. The beamline of the NV-GSD/VHE is designed to be field upgradeable to further extend the energy ranges of all species, if required, to match future process requirements.

GSD-VHE

The Optima MD, which was released in 2005. This product is referred as “mid dose” or “MD,” because it has energy and dose capabilities which extend beyond the traditional medium current space into traditional high current and high energy spaces. 

The Optima XE combines Axcelis' production-proven RF Linac high energy, spot beam technology with a high-speed, state-of-the-art single wafer endstation, enabling unmatched throughput. Axcelis' advanced spot beam ensures that all points across the wafer see the same beam at the same beam angle, resulting in exceptional process control and maximum yield.

AXCELIS

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最熱門的 AXCELIS Implanters

OPTIMA HDx

4 上架商品

NV-GSD HE

2 上架商品

NV-8200P

2 上架商品

NV-6200A

1 上架商品

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所有 AXCELIS Implanters