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描述
-Recently De-installed配置
無配置OEM 代工型號說明
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.文檔
無文檔
類別
High Current
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
118003
晶圓尺寸:
12"/300mm
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HC3
類別
High Current
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
Deinstalled
產品編號:
118003
晶圓尺寸:
12"/300mm
年份:
未知
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
-Recently De-installed配置
無配置OEM 代工型號說明
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.文檔
無文檔