概述

EATON NOVA / AXCELIS GSD 200 E2 is high current ion implanter that is configured for 200mm nodes with 13 batch wafers. It has 4 Cassette table (280 mm),2 Load buffer and 1 Dummy buffer. The input Power is 208 V, 60 Hz, 3 Phase, 95 A, 35 KVA and Output power is 90 KeV, 20 mA. Its vaccum system specifications are: A2203C, SEIKO SEIKI P1 Source turbo; STP-A2203C, SEIKO SEIKI P1 Controller; CTI OB-8 P2/Beamguide Cyro pump. Its other configurations include: 2 Ground bars; CTI_CRYOGENICS, 9650 compressor.