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描述
Description - 0-200kv High current Power Requirements - 208 V CE Marked - YES配置
Voltage: 208V Cryo-Pumps: CTI/Edwards Onboard: OB-8 + OB-10 Cryo-Kompressor: CTI 9650 Low-Voltage Source-Turbo-Pump: Seiko/Edwards STPA2203C Beamline-Turbo Pump: Oerlikon MAG W 1300 C Terminal-Rough-Pump: without (Edwards IGX Config) End station Rough-Pump: without (Edwards IGX Config) Wafer size: 200mm Disk-Type: Si-coated Disk Wafer-Cooling: no Disk-Chiller included ! Gas box: 5-String, 4x 2L Size String1: KrH2 High-Pressure Type VCR 1/4"; MFC Brooks GF120 10sccm-N2 String2: BF3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3 String3: AsH3 SDS-Low-Pressure Type VCR 1/2"; MFC MKS-1640A; 5sccm-AsH3 String4: PH3 SDS-Low-Pressure Type VCR 1/2"; MFC MKS-1640A; String5: Argon Carrier gas; MFC Brooks GF120 10sccm-N2 Disk-Drive: Direct-Drive Dose-Type: Power-Dose Source-Type: ELS4 IHC-Source without Vaporizer High voltage-Transformer Source: Oil High voltage-Transformer Terminal: Oil Light-Tower: red/yellow/green; no buzzer Main-Workstation SUN Solaris SX1500 4HE Remote-Workstation SUN Solaris Axi 3HE (special case) Software-Version: 8.2.1 (no license included) Network: 24port 100MB Ethernet with Cisco Router-Kit Cell-Controller: V6 TypeOEM 代工型號說明
The GSD/200E2 is a 200mm standard high current implanter with a maximum energy of 180KeV. It offers reliable, high productivity and exceptional product control with unmatched cost of ownership. It meets advanced manufacturing requirements through the 180nm node and maintains high throughput for quad implants used for trench doping. It features an Extended Life Source, a Xenon-based Plasma Electron Flood, and real-time dose control for consistent low doses.文檔
無文檔
AXCELIS
GSD 200E2
類別
High Current
上次驗證: 18 天前
關鍵商品詳情
條件:
Refurbished
作業狀態:
未知
產品編號:
131714
晶圓尺寸:
8"/200mm
年份:
2011
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
Description - 0-200kv High current Power Requirements - 208 V CE Marked - YES配置
Voltage: 208V Cryo-Pumps: CTI/Edwards Onboard: OB-8 + OB-10 Cryo-Kompressor: CTI 9650 Low-Voltage Source-Turbo-Pump: Seiko/Edwards STPA2203C Beamline-Turbo Pump: Oerlikon MAG W 1300 C Terminal-Rough-Pump: without (Edwards IGX Config) End station Rough-Pump: without (Edwards IGX Config) Wafer size: 200mm Disk-Type: Si-coated Disk Wafer-Cooling: no Disk-Chiller included ! Gas box: 5-String, 4x 2L Size String1: KrH2 High-Pressure Type VCR 1/4"; MFC Brooks GF120 10sccm-N2 String2: BF3 SDS-Low-Pressure Type VCR 1/4"; MFC MKS-1640A; 5sccm-AsH3 String3: AsH3 SDS-Low-Pressure Type VCR 1/2"; MFC MKS-1640A; 5sccm-AsH3 String4: PH3 SDS-Low-Pressure Type VCR 1/2"; MFC MKS-1640A; String5: Argon Carrier gas; MFC Brooks GF120 10sccm-N2 Disk-Drive: Direct-Drive Dose-Type: Power-Dose Source-Type: ELS4 IHC-Source without Vaporizer High voltage-Transformer Source: Oil High voltage-Transformer Terminal: Oil Light-Tower: red/yellow/green; no buzzer Main-Workstation SUN Solaris SX1500 4HE Remote-Workstation SUN Solaris Axi 3HE (special case) Software-Version: 8.2.1 (no license included) Network: 24port 100MB Ethernet with Cisco Router-Kit Cell-Controller: V6 TypeOEM 代工型號說明
The GSD/200E2 is a 200mm standard high current implanter with a maximum energy of 180KeV. It offers reliable, high productivity and exceptional product control with unmatched cost of ownership. It meets advanced manufacturing requirements through the 180nm node and maintains high throughput for quad implants used for trench doping. It features an Extended Life Source, a Xenon-based Plasma Electron Flood, and real-time dose control for consistent low doses.文檔
無文檔