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APPLIED MATERIALS (AMAT) xR80 LEAP II
    描述
    無描述
    配置
    Details attached.
    OEM 代工型號說明
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文檔
    文件圖示

    XR 80 LEAP II.pdf

    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

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    類別

    High Current
    上次驗證: 超過60天前
    關鍵商品詳情
    條件:

    Used

    作業狀態:

    未知

    產品編號:

    30491

    晶圓尺寸:

    8"/200mm

    年份:

    未知

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    APPLIED MATERIALS (AMAT)

    xR80 LEAP II

    verified-listing-icon

    已驗證

    類別

    High Current
    上次驗證: 超過60天前
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    關鍵商品詳情
    條件:

    Used

    作業狀態:

    未知

    產品編號:

    30491

    晶圓尺寸:

    8"/200mm

    年份:

    未知

    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    描述
    無描述
    配置
    Details attached.
    OEM 代工型號說明
    The xR80 LEAP II is used for the fabrication of semiconductors using 0.18 micron and below features. It is designed to extend high current implant technology to 0.1 micron device geometries and 300mm wafer sizes. The xR80 LEAP II is a high current implanter with an energy range of 80KeV. It has a Hollow Gripper, PEEK Moving Clips, and a Bernas type ion source. It also has a standard plasma flood system and can handle gases such as BF3, PH3, and AsH3.
    文檔
    文件圖示

    XR 80 LEAP II.pdf

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