LAM RESEARCH CORPORATION

Lam’s 2300 Versys Star silicon etch system is designed to meet the challenging needs of sub-90-nm technologies. It delivers superior performance on complex film stacks and meets the requirements for next-generation silicon etch processes to sub-65 nm. The system provides excellent CD bias uniformity, enabled by the industry’s first technologies for tuning gas flows and wafer temperature with step-by-step settings. This allows flexibility in designing the process across the wafer and between steps, leading to a larger process window that can accommodate an extensive variety of applications, wafer types, and film types. The 2300 Versys Star is available as an upgrade to existing 2300 Versys systems.

LAM RESEARCH CORPORATION

2300 VERSYS STAR

Dry / Plasma Etch

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2300 VERSYS STAR

Dry / Plasma Etch

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