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描述
The 901e system was upgraded to run 6" wafers and a windows pc based control system. It was fully working when disconnected in March 2014. Tool is shut down and stored in old clean room area.配置
無配置OEM 代工型號說明
The Tegal 901e is an inline RIE/plasma production etcher for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and CF4. The Tegal 901e plasma etcher is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated at an appropriate time, the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.文檔
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TEGAL
901E
類別
Dry / Plasma Etch
上次驗證: 超過60天前
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條件:
Used
作業狀態:
未知
產品編號:
19747
晶圓尺寸:
6"/150mm
年份:
未知
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描述
The 901e system was upgraded to run 6" wafers and a windows pc based control system. It was fully working when disconnected in March 2014. Tool is shut down and stored in old clean room area.配置
無配置OEM 代工型號說明
The Tegal 901e is an inline RIE/plasma production etcher for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and CF4. The Tegal 901e plasma etcher is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated at an appropriate time, the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.文檔
無文檔