概述

Oxide etcher. Process performance: Specialized for critical etch process (DRAM, V-NAND and Logic). Clean process / low Particle. High etch rate / high mask selectivity. Precise CD and CD uniformity control. Vertical profile control and low micro-loading effect. Productivity / Hardware: Cluster transfer module : Max. 6 chambers. Layout for easy maintenance. RF sync pulse function for HARC etch. Radial uniformity control HW : gas, temperature. Precise & reliable process parameter control. Low CoO / Long MTBC.