描述
無描述配置
Software Version: A2.2-Release CIM: SECGEM Process: LAM Metal Main System: Main System (1) OK Handler SystemL LPI2200 (2) OK Factory Interface: NONE MAIN AC/SYSTEM: CONTROLLER (1) OKOEM 代工型號說明
The TCP 9600PTX is a high-density, low-pressure etch system from Lam Research’s TCP product line. It incorporates the company’s patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution for their advanced processing needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer configuration or in conjunction with the Alliance multi-chamber cluster platform.文檔
無文檔
LAM RESEARCH CORPORATION
TCP 9600PTX
已驗證
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
111959
晶圓尺寸:
8"/200mm
年份:
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
LAM RESEARCH CORPORATION
TCP 9600PTX
類別
Dry / Plasma Etch
上次驗證: 超過60天前
關鍵商品詳情
條件:
Used
作業狀態:
未知
產品編號:
111959
晶圓尺寸:
8"/200mm
年份:
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
描述
無描述配置
Software Version: A2.2-Release CIM: SECGEM Process: LAM Metal Main System: Main System (1) OK Handler SystemL LPI2200 (2) OK Factory Interface: NONE MAIN AC/SYSTEM: CONTROLLER (1) OKOEM 代工型號說明
The TCP 9600PTX is a high-density, low-pressure etch system from Lam Research’s TCP product line. It incorporates the company’s patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution for their advanced processing needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer configuration or in conjunction with the Alliance multi-chamber cluster platform.文檔
無文檔