概述

The 2300 Flex G is part of Lam’s Flex product family, which offers differentiated technologies and application-focused capabilities for critical dielectric etch applications. Dielectric etch is the process of carving patterns in insulating materials to create barriers between the electrically conductive parts of a semiconductor device. The Flex G series is designed to address the challenges of dielectric etch, including the ability to etch multi-layer film stacks with extreme selectivity, creating optimal etched profiles at increasingly higher aspect ratios, and providing repeatable dimension control in high-volume production. The Flex G series offers exceptional uniformity, repeatability, and tunability enabled by a unique multi-frequency, small-volume, confined plasma design. It also provides high productivity with low defectivity, enabled by in-situ multi-step etch and continuous plasma capability. Additionally, the Flex G series offers low-risk, cost-effective upgrades that extend product life and maximize return on investment.