概述

Applied Centura Tetra III Advanced Reticle Etch delivers vital nanomanufacturing technology required for etching 45nm photomasks. The Tetra III controls trench depths across quartz masks to <10Å and reduces critical dimension (CD) loss to <10nm-enabling the use of alternating phase shift mask (PSM) and aggressive optical proximity correction techniques in the most critical device layers. The system offers etch processes for chrome, quartz, molybdenum silicon oxynitride (MoSiON), and various new materials for next generation lithography applications.