概述

It is a high force bonder, from 10 gram-force up to 400 kilogram-force depending on the head configuration. This device bonder can operate as a "classic" one but also with a confinement chamber, using an acid gas mixture and/or reduced pressure. This permits much better quality of bonding process, resulting in good electrical conductivity and high mechanical resistance for more reliable components. Substrate size can be up to 300mm wafer.